Thin film forming apparatus using laser

Details Thin film forming apparatus using laser Thin film forming apparatus using laser

1996-08-07

2000-03-07

Bueker, Richard

Coating processes

Direct application of electrical, magnetic, wave, or...

Electromagnetic or particulate radiation utilized

118726, C23C 1400

Patent

active

060337419

ABSTRACT:
A thin film forming apparatus using laser includes a chamber (1), a target (5) placed therein, a laser light source (10) for emitting laser beam to target (5), and a substrate holder (3). When target (5) is irradiated with laser beam (16), a plume (15) is generated, and materials included in plume (15) are deposited on the surface of a substrate (2) held by substrate holder (3). The laser beam emitted from laser light source (10) has its cross section shaped to a desired shape when passed through a shielding plate (4804), for example, so that the surface of the target (5) is irradiated with the beam having uniform light intensity distribution. Therefore, a plume (15) having uniform density distribution of active particles is generated, and therefore a thin film of high quality can be formed over a wide area with uniform film quality, without damaging the substrate.

REFERENCES:
patent: 4275288 (1981-06-01), Makosch et al.
patent: 4636403 (1987-01-01), Fisanick et al.
patent: 4664769 (1987-05-01), Cuomo et al.
patent: 4701592 (1987-10-01), Cheung
patent: 4743463 (1988-05-01), Ronn et al.
patent: 4970196 (1990-11-01), Kim et al.
patent: 5015492 (1991-05-01), Venkatesan et al.
patent: 5037521 (1991-08-01), Nishikawa et al.
patent: 5049405 (1991-09-01), Cheung
patent: 5084300 (1992-01-01), Zander et al.
patent: 5097793 (1992-03-01), Shuhara et al.
patent: 5126165 (1992-06-01), Akihama et al.
patent: 5128214 (1992-07-01), Takayanagi et al.
patent: 5153773 (1992-10-01), Muraki et al.
patent: 5159169 (1992-10-01), Nishikawa et al.
patent: 5212148 (1993-05-01), Roas
patent: 5415901 (1995-05-01), Tanaka et al.
patent: 5426092 (1995-06-01), Ovshinsky
patent: 5693146 (1997-12-01), Nakanishi
Patent Abstracts of Japan No. 3-68762.
Patent Abstracts of Japan No. 2-310363.
Patent Abstracts of Japan No. 2-298261.
Patent Abstracts of Japan No. 1-219155.
Patent Abstracts of Japan No. 1-208455.
Patent Abstracts of Japan No. 1-39371.
"Pulsed Laser Evaporation and Epitaxy of Thin Semiconductor Films," Dubowski, 1988, Butterworth & Co., Ltd.
"Superconductivity and crystallinity of Ba.sub.2 Y.sub.1 Cu.sub.3 O.sub.7-.delta. thin films prepared by pulsed laser deposition with substrate bias voltage," Izumi, J. Appl. Phys. 68(12), Dec. 15, 1990, pp. 6331-6335.
Greer, Proceedings of the Third Annual Conf. Superconductivity and Applications, Buffalo, NY, Sep. 1989.
Optical Wave Electronics, Corona Publishing Co., Ltd., pp. 278-286, Jiro Koyama et al.
"Epitaxial Growth of Thin Films of BaTio.sub.3 Using Excimer Laser Ablation," G.M. Davies et al., Appl. Phys. Lett., Vol 55, No. 2, Jul. 1989, pp. 112-114.
"Pulsed-Laser Evaporation Technique for Deposition of Thin Films: Physics and Theoretical Model," R.K. Singh et al., Physical Review B, vol, 41, No. 13, pp. 8843-8859, May 1990.
Patent Abstracts of Japan No. 4-83866.
Patent Abstracts of Japan No. 3-188274.
Patent Abstracts of Japan No. 3-180466.
Webster's New Collegiate Dictionary, Merriam-Webster, .COPYRGT.1975, Springfield, Mass pg. 1303.

Affiliated with

Also associated with

Rating

Thin film forming apparatus using laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film forming apparatus using laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film forming apparatus using laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-360731