Thin film forming apparatus cleaning method

Drying and gas or vapor contact with solids – Process – Gas or vapor pressure is subatmospheric

Reexamination Certificate

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Reexamination Certificate

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06925731

ABSTRACT:
A cleaning process for cleaning a thermal processing apparatus includes: a heating step of heating an interior of a reaction tube at 300° C., and a cleaning step of removing deposits deposited in the thermal processing apparatus. In the cleaning step, a cleaning gas containing fluorine gas, chlorine gas and nitrogen gas is supplied into the interior of the reaction tube heated at 300° C. to remove silicon nitride so to clean an interior of the thermal processing apparatus.

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patent: 5966623 (1999-10-01), Khosla et al.
patent: 6030932 (2000-02-01), Leon et al.
patent: 6374831 (2002-04-01), Chandran et al.
patent: 03-293726 (1991-12-01), None
patent: 4-96222 (1992-03-01), None
patent: 2000-265276 (2000-09-01), None
patent: 2001-189273 (2001-07-01), None
patent: 2001-267241 (2001-09-01), None
patent: 2002-33289 (2002-01-01), None
Notification of Reason for Rejection, mailed Dec. 24, 2002.
Translation of Notification of Reason for Rejection, mailed Dec. 24, 2002.
International Preliminary Examination Report (PCT/IPEA/409) (translated) issued for PCT/JP2002/001492.
Notification of Transmittal of Copies of Translation of the International Preliminary Examination Report (PCT/IB/338) issued for PCT/JP2002/001492.

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