Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1998-03-24
2000-02-22
Nguyen, Nam
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429816, 20429825, 20429826, C23C 1434, C23C 1435
Patent
active
060276215
ABSTRACT:
A thin film forming apparatus is formed of a vacuum chamber, a partition for separating the vacuum chamber, two ECR plasma generating devices provided on both sides of the vacuum chamber. A base plate is situated in the partition, and targets are disposed on both sides of the base plate in the vacuum chamber. ECR plasma is formed on both side surfaces of the base place in the vacuum chamber, and ions are caused to collide against the targets to thereby spring out atoms and to form thin films on both side surfaces of the base plate through sputtering.
REFERENCES:
patent: 4610770 (1986-09-01), Saito et al.
patent: 4721553 (1988-01-01), Saito et al.
patent: 4874497 (1989-10-01), Matsuoka et al.
patent: 4909184 (1990-03-01), Fujiyama
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5022977 (1991-06-01), Matsuoka et al.
patent: 5232569 (1993-08-01), Nelson et al.
patent: 5487785 (1996-01-01), Horiike et al.
patent: 5611864 (1997-03-01), Kimura et al.
patent: 5726412 (1998-03-01), Briffod et al.
patent: 5762766 (1998-07-01), Kurita et al.
patent: 5891311 (1999-04-01), Lewis et al.
Akita Noritaka
Ogura Shinichi
Nguyen Nam
Shimadzu Corporation
Ver Steeg Steven H.
LandOfFree
Thin film forming apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film forming apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film forming apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-517488