Thin film-forming apparatus

Details Thin film-forming apparatus Thin film-forming apparatus

1993-07-22

1994-10-11

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

118723CB, C23C 1600

Patent

active

053544455

ABSTRACT:
A thin film forming apparatus which utilizes cluster ion beam deposition to form thin films on a substrate. In one embodiment, the electrons which ionize the vapor clusters are generated by a cathode which is located inside the corresponding anode. The cathode serves not only as a source of electrodes but also as a means for heating the crucible containing the substance to be deposited. In another embodiment, an electron emitter located at a position remote from the vapor flow in the apparatus is utilized as the source of electrons to form the ionized clusters.

REFERENCES:
patent: 3556048 (1971-01-01), Paine
patent: 4098919 (1978-07-01), Morimoto et al.
patent: 4152478 (1979-05-01), Takagi et al.
patent: 4213844 (1980-07-01), Morimoto et al.
patent: 4394210 (1983-07-01), Morimoto et al.
patent: 4480010 (1984-10-01), Sasanuma et al.
patent: 4501225 (1985-02-01), Nagao et al.
patent: 4526802 (1985-07-01), Sato et al.
patent: 4624859 (1986-11-01), Akira et al.
patent: 4990575 (1990-01-01), Ito et al.
patent: 5041302 (1991-08-01), Koide
Ito et al., "Development of Ionized Cluster Beam Source for Practical Use", Rev. Sci. Instrum 61 (1), Jan. 1990, pp. 604-606.

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