Thin film formation use sputtering target material, thin...

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C204S192200, C204S192260, C204S192270

Reexamination Certificate

active

06972076

ABSTRACT:
An alloy material, a thin film and an optical recording medium to achieve various tasks such as maintenance of a high reflectivity, improved corrosion resistance, simplified production of the alloy, and realization of stability and simplicity/easiness of a sputtering process when being used as a sputtering target. An AgPd alloy including Ag as a main component and Pd in the range of 0.5 to 4.9 atomic % is used as a thin film formation use sputtering target material, with the target material a thin film, that is a reflecting film, constituting an optical recording medium is formed and the optical recording medium containing the reflecting film as a constituent is produced.

REFERENCES:
patent: 4647947 (1987-03-01), Takeoka et al.
patent: 5948497 (1999-09-01), Hatwar et al.
patent: 6004646 (1999-12-01), Ohno et al.
patent: 6007889 (1999-12-01), Nee

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thin film formation use sputtering target material, thin... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film formation use sputtering target material, thin..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film formation use sputtering target material, thin... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3504722

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.