Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Patent
1998-03-25
2000-10-17
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
438407, 438482, 438486, 257 53, H01L 2176, H01L 21306
Patent
active
061331120
ABSTRACT:
A process for thin film formation is provided which comprises a step of separation of a substrate constituted of a nonporous Si layer, a porous Si layer formed thereon, and a less porous Si layer formed further thereon into the nonporous Si layer and the less porous Si layer at the porous Si layer, wherein the separation is caused by projecting a laser beam through the side face of the substrate. From the separated substrate, an SOI substrate is prepared, and the non porous Si layer is recycled to the SOI substrate production process. This SOI substrate production process saves the consumption of the material and lowers the production cost. The substrates are separated definitely. A process for producing a photoelectric transducing apparatus such as solar cells with material saving and low cost is also provided in which the porous layer is separated definitely without strong adhesion between the substrate and a jig.
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Takao Yonehara, et al., "Epitaxial Layer Transfer by Bond and Etch Back of Porous Si", Applied Physics Letters, 1994, vol. 64, pp. 2108-2110.
Iwane Masaaki
Yonehara Takao
Blum David S.
Canon Kabushiki Kaisha
Nguyen Tuan H.
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