Thin film field effect transistors utilizing a polypnictide semi

Details Thin film field effect transistors utilizing a polypnictide semi Thin film field effect transistors utilizing a polypnictide semi

1984-06-11

1985-12-10

Edlow, Martin H.

357 2, 357 61, 357 52, H01L 2978

Patent

active

045583404

ABSTRACT:
Thin film field effect transistors utilize MP.sub.x as the active switched semiconductor where M is at least one alkali metal, P is at least one pnictide, and x ranges from 15 to infinity. Phosphorus is preferred as the dominant pnictide and potassium is preferred as the dominant alkali metal. The local order of the semiconductors may vary from an all parallel pentagonal tube-like structure to a layer-like puckered sheet structure. The all parallel pentagonal tube structure is preferred. Metal insulated semiconductor (MISFETS) and metal semiconductor (MESFETS) field effect transistors are disclosed. The semiconductor is preferably doped with up to approximately 1/2% nickel, iron, or chromium, to reduce the density of defect levels in the bandgap without increasing the conductivity. The semiconductors may be doped with 1/2-1% of the same metals to increase conductivity so as to provide normally ON devices. The regions of a semiconductor under the source and drain may be heavily doped with 2-3% of the same metals to provide good contact to the source and drain. Nickel is the preferred metal. The insulating layer may be SiO.sub.2, Al.sub.2 O.sub.3, or Si.sub.3 N.sub.4, but is preferably P.sub.3 N.sub.5 to provide chemical continuity to the polypnictide semiconductor.

REFERENCES:
patent: 4508931 (1985-04-01), Michel et al.
patent: 4509066 (1985-04-01), Schachter
Hayama et al., Appl. Phys. Lett.; 36 (9) May 1980.
Weimer, Proceed. of the IRE, Jun. 1962, pp. 1462 et seq.

Affiliated with

Also associated with

Rating

Thin film field effect transistors utilizing a polypnictide semi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film field effect transistors utilizing a polypnictide semi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film field effect transistors utilizing a polypnictide semi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-61803