Thin-film field-effect transistors and making method

Details Thin-film field-effect transistors and making method Thin-film field-effect transistors and making method

2007-08-14

2007-08-14

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S079000, C257S080000, C257S082000, C257S290000, C257S291000, C257SE31115, C257SE27133, C257SE25032

Reexamination Certificate

active

11092591

ABSTRACT:
In a thin-film field-effect transistor having a MIS structure, the insulator layer is formed of cyanoethylated dihydroxypropyl pullulan. The TFT is prepared by applying a cyanoethylated dihydroxypropyl pullulan solution onto a gate electrode in the form of a metal layer, drying the applied solution to form an insulator layer, and thereafter, forming a semiconductor layer thereon.

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