Thin film field-effect transistor and display using the same

Details Thin film field-effect transistor and display using the same Thin film field-effect transistor and display using the same

2011-08-09

2011-08-09

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S043000, C438S104000

Reexamination Certificate

active

07994579

ABSTRACT:
The present invention provides a thin film field-effect transistor comprising a substrate having thereon at least a gate electrode, a gate insulating film, an active layer, a source electrode, and a drain electrode, wherein the active layer is an oxide semiconductor layer, a resistance layer having an electric conductivity that is lower than an electric conductivity of the active layer is provided between the active layer and at least one of the source electrode or the drain electrode, and an intermediate layer comprising an oxide comprising an element having a stronger bonding force with respect to oxygen than that of the oxide semiconductor in the active layer is provided between the active layer and the resistance layer.

REFERENCES:
patent: 2006/0038242 (2006-02-01), Hsu et al.
patent: 2006/0244107 (2006-11-01), Sugihara et al.
patent: 2008/0191204 (2008-08-01), Kim et al.
patent: 2010/0038641 (2010-02-01), Imai
patent: 2010/0163863 (2010-07-01), Yaegashi
patent: 2006-165529 (2006-06-01), None
patent: 2008-53356 (2008-03-01), None
patent: 2008-166716 (2008-07-01), None
Corresponding EPO Official communication, Dec. 10, 2009.
IDW/AD' 05, pp. 845-846 (Dec. 6, 2005).
Nature, vol. 432, pp. 488-492 (Nov. 25, 2004).

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