Thin film fabrication method and thin film fabrication...

Details Thin film fabrication method and thin film fabrication... Thin film fabrication method and thin film fabrication...

2005-03-29

2005-03-29

Mills, Gregory (Department: 1763)

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

C204S192300, C427S524000, C427S569000

Reexamination Certificate

active

06872289

ABSTRACT:
A thin film is fabricated while causing ions in a plasma P to be incident by effecting biasing relative to the space potential of the plasma P by imparting a set potential to the surface of a substrate9. A bias system6causes the substrate surface potential Vs to vary in pulse form by imposing an electrode imposed voltage Ve in pulse form on a bias electrode23which is in a dielectric block22. The pulse frequency is lower than the oscillation frequency of ions in the plasma P, and the pulse period T, pulse width t and pulse height h are controlled by a control section62in a manner such that the incidence of ions is optimized. The imposed pulses are controlled in a manner such that the substrate surface potential Vs recovers to a floating potential Vf at the end of a pulse period T, and that the ion incidence energy temporarily crosses a thin film sputtering threshold value in a pulse period T.

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