Thin film electroluminescence device with Zn concentration gradi

Details Thin film electroluminescence device with Zn concentration gradi Thin film electroluminescence device with Zn concentration gradi

1989-07-26

1991-07-02

Jackson, Jr., Jerome

Electric lamp and discharge devices

With temperature modifier

For lead-in-seal or stem protection

357 19, 357 30, 313509, H01L 3300, H01L 3112, H01L 3116, H01L 2714

Patent

active

050293206

ABSTRACT:
A thin film electroluminescence device is disclosed which comprises are electrode formed on a transparatent substrate, one dielectric layer formed on the electrode, an emitting layer containing Group IIIb-Vb compound as a host material and positive trivalent element ions added as a luminescence center to the host material, the other dielectric layer formed on the emitting layer, the other electrode provided on the other dielectric layer.

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patent: 4855249 (1989-08-01), Akasaki et al.
patent: 4967251 (1990-10-01), Tanaka et al.
Weyrich et al., A Sample LPE Process for Efficient Red and Green GaP Diodes, Sept., 1974, pp. 145-154, 357* 17.
J. I. Pan Kove et al., GaN Yellow-Light Emitting Diodes, Jan. 1973, pp. 54-60, 357* 17.
J. I. Pankove, "Luminescence in GaN", J. Luminscence 7(1973), pp. 114-126.
R. F. Rutz, "Ultraviolet Electroluminescence in AlN", Appl. Phys. Lett., 28(7) (1976) 379.
S. Yoshida, S. Misawa, and S. Gonda, "Properties of AlxGal-xN Films Prepared by Reactive Molecular Beam Epitaxy", J. Appl. Phys. 53(10) (1982), 6844.
F. Kido, H. Yoshikawa, "Thin Film EL Using AlxGal-xN as Matrix", Extended Abstracts (The 36th Spring Meeting, 1989); The Japan Society of Applied Physics and Related Societies No. 3 (1989), 1065.

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