Thin film devices and methods for forming the same

Details Thin film devices and methods for forming the same Thin film devices and methods for forming the same

2006-10-30

2009-06-02

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S062000, C257SE21561

Reexamination Certificate

active

07541227

ABSTRACT:
Thin film devices and methods for forming the same are disclosed herein. A method for forming a thin film device includes forming a first at least semi-conductive strip located at a first height relative to a surface of a substrate, and forming a second at least semi-conductive strip adjacent to the first at least semi-conductive strip. The second strip is located at a second height relative to the substrate surface, and the second height is different than the first height. A nano-gap is formed between the first and second at least semi-conductive strips.

REFERENCES:
patent: 4492181 (1985-01-01), Ovshinsky et al.
patent: 6534414 (2003-03-01), Wang et al.
patent: 6593624 (2003-07-01), Walker
patent: 6709929 (2004-03-01), Zhang et al.
patent: 6740910 (2004-05-01), Roesner et al.
patent: 6897009 (2005-05-01), Johnson, Jr. et al.
patent: 6924538 (2005-08-01), Jaiprakash et al.
patent: 6946336 (2005-09-01), Pang et al.
patent: 7037744 (2006-05-01), Colburn et al.
patent: 7067378 (2006-06-01), Fishburn et al.
patent: 7098114 (2006-08-01), Syau et al.
patent: 2002/0086483 (2002-07-01), Kim et al.
patent: 2004/0166642 (2004-08-01), Chen et al.
patent: 2005/0121706 (2005-06-01), Chen et al.
patent: 2005/0136419 (2005-06-01), Lee
patent: 2005/0272212 (2005-12-01), Ho et al.
patent: 2005/0285275 (2005-12-01), Son et al.
patent: 2006/0134922 (2006-06-01), Taussig et al.
patent: 2006/0166518 (2006-07-01), Dunnrowicz

Affiliated with

Also associated with

Rating

Thin film devices and methods for forming the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film devices and methods for forming the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film devices and methods for forming the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4103073