Thin-film device, method for manufacturing the same, and...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C438S073000, C257S437000, C257SE21600, C257SE21411, C257SE31001

Reexamination Certificate

active

07875510

ABSTRACT:
A method for manufacturing a thin-film device includes forming a separation layer on a substrate, forming a support layer of mainly clay containing silicate mineral having a layered crystal structure on the separation layer, forming a thin-film functional member on the support layer, applying an energy to the separation layer to reduce the adhesion between the substrate and the support layer, and removing the substrate from the support layer and the thin-film functional member.

REFERENCES:
patent: 2002/0139981 (2002-10-01), Young
patent: 2009/0141230 (2009-06-01), Inoue et al.
patent: 2010/0090224 (2010-04-01), Lee et al.
patent: 2010/0133546 (2010-06-01), Jain
patent: 10-125929 (1998-05-01), None
patent: 10-125930 (1998-05-01), None
patent: 10-125931 (1998-05-01), None
patent: 2003-069034 (2003-03-01), None
patent: 2004-519866 (2004-07-01), None
patent: 2007-250435 (2007-09-01), None

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