Thin film device and a method for fabricating the same

Details Thin film device and a method for fabricating the same Thin film device and a method for fabricating the same

1996-04-15

1997-08-26

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

4302761, 4302781, 430314, 430324, 428209, 428457, 428469, 428471, 428620, G03F 730, G03F 711

Patent

active

056609710

ABSTRACT:
A thin film device includes a substrate, a conductive oxide film formed on the substrate, and a metal film formed on the substrate and in contact with at least a part of the conductive oxide film. The metal film includes aluminum and a metallic material. The metallic material has a standard electrode potential higher than the standard electrode potential of the aluminum so that the standard electrode potential of the metal film is higher than the reduction potential of the conductive oxide film.

REFERENCES:
patent: 4372809 (1983-02-01), Grewal et al.
patent: 4420504 (1983-12-01), Cooper et al.
patent: 5150233 (1992-09-01), Enomoto et al.
patent: 5296653 (1994-03-01), Kiyota et al.
H. Nishino et al., "Anti-Corrosion Process for Al-ITO System with Electrolytic Development Solution," Sharp Giho, No. 44, pp. 31-36 (Mar. 1990).

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