Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-05-03
2005-05-03
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S013000, C257S037000
Reexamination Certificate
active
06888156
ABSTRACT:
The invention provides a thin film device where ionic crystals are epitaxially grown on a Si single crystal substrate through a proper buffer layer, and its for fabrication method. A ZnS layer is first deposited on a Si single crystal substrate. Ionic crystal thin films (an n-GaN layer, a GaN layer, and a p-GaN layer) are deposited thereon. The ZnS thin film is an oriented film excellent in crystallinity and has excellent surface flatness. When ZnS can be once epitaxially grown on the Si single crystal substrate, the ionic crystal thin films can be easily epitaxially grown subsequently. Therefore, ZnS is formed to be a buffer layer, whereby even ionic crystals having differences in lattice constants from Si can be easily epitaxially grown in an epitaxial thin film with few lattice defects on the Si single crystal substrate. The characteristics of a thin film device utilizing it can be enhanced.
REFERENCES:
patent: 3-160735 (1991-07-01), None
patent: 3-160736 (1991-07-01), None
patent: 3-187189 (1991-08-01), None
patent: 08082612 (1996-03-01), None
patent: 2002-003297 (2002-01-01), None
Yahoo! Search results for EPITAXIAL, pp. 1-3.
A. Miyake et al.,“Luminescent properties of ZnO thin films grown epitaxially on Si substrate”, Journal of Crystal Growth, 214/215, 2000, pp. 294-298.
Oyo Buturi, vol. 68, p. 790 (1999).
Applied Physics, vol. 68, p. 798, (1999).
Oxide Electronics Report II, Japan Electronics and Information Technology Industries Association, pp. 135 to 141 (1997).
Japanese Journal of Applied Physics, vol. 39 (2000).
Appl. Phys. Lett. 69, 3266 (1996).
National Technical Report, vol. 33, No. 6, p. 687 (1987).
JSAP Catalog No. AP 021108-02, Portions of the index of the 49thSpring Meeting, 2002 of The Japan Society of Applied Physics and Related Societies.
Y.Z. Yoo et al., “Fabrication of Epitaxial Wurtzite ZnS Film on Bare Si Substrate,” Proceedings of the 2001 Spring JSAP annual meeting, 29a-K-7, 2001, p. 323.
Yoshinori Konishi et al., “Preparation of Epitaxial Thin Films On Si Substrate With A ZnS Buffer Layer,” Proceedings of the 2002 Spring JSAP annual meeting, 28p-YB-8, 2002, p. 621.
Y.Z. Yoo, et al., “ZnO/ZnS Heteroepitaxy On Si By Laser-MBE,” Proceedings of the 2002 Spring JSAP annual meeting, 28p-ZN-2, 2002, p. 315.
Akito Kuramata et al., “Continuous-Wave Operation InGaN Laser Diodes On SiC Substrates,” Oyobuturi, The Japan Society of Applied Physics, Jul. 10, 1999, pp. 797-800, vol. 68, No. 7.
Seikoh Yoshida, “Electronic Devices Using GaN,” Oyobuturi, The Japan Society of Applied Physics, Jul. 10, 1999, pp. 787-792, vol. 68, No. 7.
Von Robert Juza et al., “Solid Solution In Systems ZnS/MnS, ZnSe/MnSe and ZnTe/MnTe,” Journal of Inorganic and General Chemistry, vol. 285, 1956, pp. 61-69.
Copy of U.S. Appl. No. 10/665,524.
Chikyow Toyohiro
Kawasaki Masashi
Koinuma Hideomi
Konishi Yoshinori
Yonezawa Yoshiyuki
Fuji Electric Corporate Research & Development Ltd.
National Institute for Materials Science
Schneller Marina V.
Tokyo Institute of Technology
Tran Thien F
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