Thin-film device

Details Thin-film device Thin-film device

1992-04-07

1993-11-30

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257401, 257444, 257532, 257 57, 250331, H01L 2701, H01L 2978, H01L 2712, G02F 113

Patent

active

052668258

ABSTRACT:
A thin-film transistor using hydrogenated amorphous silicon (a-Si:H), and particularly a thin-film device such as a thin-film transistor having high conductivity, large drivability and high process margin, and a display panel using the same transistors. The object of the invention is to reduce defects due to shorts between the gate and the source or between the gate and the drain, to prevent signal line defect even in case defects develop due to shorts, and to expand the design margin and process margin in the array. A capacity is connected to the gate electrode of the channel side and a voltage is applied to the gate electrode via the capacity.

REFERENCES:
patent: 4984041 (1991-01-01), Hack et al.

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