Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1990-06-08
1992-08-04
Nguyen, Nam X.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
2041921, 20429801, 20429802, 118715, C23C 1434, C23C 1600
Patent
active
051356295
ABSTRACT:
In a system for thin film deposition by vapor growth, the contamination of devices and the formation of particles in the deposited thin film inside the system are prevented by the provision therein of an anti-contamination means which is chosen from among (1) an electrolytic cop-per foil having a fine-grained thin layer of copper or/and copper oxide formed by copper plating on the matte surface of the copper foil, (2) an electrolytic copper foil having a fine-grained thin layer of copper or/and copper oxide formed by copper plating on the matte surface of the foil and coated with a material which is the same as or is harmless and similar to the material to be deposited as a thin film by vapor growth onto the substrate, (3) a corrugated metal foil, and (4) a metal foil formed with a plurality of irregularities by embossing.
REFERENCES:
patent: 3220897 (1965-11-01), Conley et al.
patent: 3293109 (1966-12-01), Luce et al.
Vossen et al., Thin Film Processes, Academic Press, 1978, p. 41.
Anan Junichi
Kanou Osamu
Sawada Susumi
Seki Takakazu
Wada Hironori
Nguyen Nam X.
Nippon Mining Co., Ltd.
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