Thin film deposition process

Details Thin film deposition process Thin film deposition process

1988-08-05

1990-03-27

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419212, 20419226, 204298, C23C 1446

Patent

active

049118099

ABSTRACT:
A thin film deposition process comprises the steps of providing a first target area on a magnetron electrode, sputtering particles from said area so that they fall onto a heated substrate body for forming the required deposit, simultaneously operating a sputtering gun such that further particles are dislodged from a second target area and directed towards the substrate, the two resulting particle plasmas mixing at the substrate surface such that a deposit of a predetermined chemical composition is produced.
This allows a multicomponent material such as a PLZT ceramic to be deposited without a change in composition due to different volatilities etc. of the components.

REFERENCES:
patent: 4731172 (1988-03-01), Adachi et al.
patent: 4793908 (1988-12-01), Scott et al.
E. Kay et al., IBM Tech. Disc. Bull., vol. 12, No. 9, Feb. 1970, p. 1358.
R. N. Castellano et al., J. Vac. Sci. Technol., vol. 16, No. 2, Mar./Apr. 1979, p. 184.

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