Thin film deposition chamber

Coating apparatus – Gas or vapor deposition – With treating means

Patent

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Details

20429827, 118723VE, C23C 16448, C23C 1600

Patent

active

060822961

ABSTRACT:
A thin film deposition chamber utilizes a planetary fixture and two vapor sources to generate two partially overlapping vapor streams. The two vapor streams create a combined distribution profile. The planetary fixture holds a plurality of substrates in a position similar to a portion of the combined distribution profile.

REFERENCES:
patent: 3598083 (1971-08-01), Dort et al.
patent: 3799110 (1974-03-01), Bellman
patent: 3889632 (1975-06-01), Brunner et al.
patent: 4010710 (1977-03-01), Williams
patent: 4380212 (1983-04-01), Kraus
patent: 4823735 (1989-04-01), Pichel et al.
patent: 4858556 (1989-08-01), Siebert
patent: 5190590 (1993-03-01), Suzuki et al.
patent: 5262194 (1993-11-01), Bischer, Jr. et al.
patent: 5478398 (1995-12-01), Nakanishi et al.
patent: 5741404 (1998-04-01), Cathey

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