Thin film deposition apparatus

Details Thin film deposition apparatus Thin film deposition apparatus

1996-09-27

1999-09-07

Breneman, Bruce

Coating apparatus

Gas or vapor deposition

With treating means

156345, 118723R, 118504, C23C 1600

Patent

active

059481676

ABSTRACT:
A thin film deposition apparatus which includes a mesh type radio frequency (RF) electrode plate adapted to form plasma, a baffle guide adapted to prevent the plasma from diffusing at a low pressure, and a control unit adapted to perform control of temperature for preventing a reacting raw material from generating a degraded reaction in a gas injector, thereby enabling formation of a multi-element thin film using a multi-element reacting raw material and formation of a uniform thin film having a high density to obtain micro patterns of highly integrated semiconductor devices.

REFERENCES:
patent: 4911809 (1990-03-01), Wort et al.
patent: 5006192 (1991-04-01), Deguchi
patent: 5052339 (1991-10-01), Vakerlis et al.
patent: 5411591 (1995-05-01), Izu et al.
patent: 5614055 (1997-03-01), Fairbairn et al.

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