Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...
Reexamination Certificate
2009-12-08
2011-12-13
Dang, Trung Q (Department: 2892)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with preceding...
C438S507000, C257SE21091, C257SE21462
Reexamination Certificate
active
08076224
ABSTRACT:
A process for coating a substrate at atmospheric pressure is disclosed, the process comprising the steps of vaporizing a mass of semiconductor material within a heated inert gas stream to create a fluid mixture having a temperature above the condensation temperature of the semiconductor material, directing the fluid mixture at the substrate, the substrate having a temperature below the condensation temperature of the semiconductor material thereby depositing a layer of the semiconductor material onto a surface of the substrate, extracting undeposited semiconductor material; and circulating the undeposited semiconductor material into the fluid mixture having a temperature above the condensation temperature.
REFERENCES:
patent: 4027206 (1977-05-01), Lee
patent: 4504526 (1985-03-01), Hofer et al.
patent: 5501744 (1996-03-01), Albright et al.
patent: 5536333 (1996-07-01), Foote et al.
patent: 5994642 (1999-11-01), Higuchi et al.
patent: 6676994 (2004-01-01), Birkmire et al.
patent: 7301155 (2007-11-01), Tokuda et al.
patent: 7335918 (2008-02-01), Takayama et al.
patent: 7635647 (2009-12-01), Johnston
patent: 7674713 (2010-03-01), Johnston et al.
patent: 2001/0041463 (2001-11-01), Kakkad
patent: 2006/0236939 (2006-10-01), Powell et al.
patent: 2006/0236940 (2006-10-01), Powell et al.
patent: 2007/0269984 (2007-11-01), Araki
patent: 2008/0153268 (2008-06-01), Johnston et al.
patent: 2008/0311729 (2008-12-01), Johnston
Chemical Vapor Deposition of Chalcogenide Semiconductors, NTiS, Aug. 1975, U.S. Department of Commerce, National Technical Information Service, ADA017524, Massachusetts Inst of Tech Cambridge Center for Materials Science and Engineering: H. Kent Bowen, et al.
Calyxo GmbH
Dang Trung Q
Fraser Clemens Martin & Miller LLC
Miller J. Douglas
LandOfFree
Thin-film deposition and recirculation of a semi-conductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin-film deposition and recirculation of a semi-conductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin-film deposition and recirculation of a semi-conductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4303961