Thin film conductor and method of fabrication

Details Thin film conductor and method of fabrication Thin film conductor and method of fabrication

2006-08-11

2010-10-05

Fahmy, Wael M (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S753000, C349S147000

Reexamination Certificate

active

07808108

ABSTRACT:
A thin film conductor having improved adhesion and superior conductivity, a method for fabricating the same, a thin film transistor (TFT) plate including the thin film conductor, and a method for fabricating the TFT plate are provided. The thin film conductor includes an adhesive layer containing an oxidation-reactive metal or silicidation-reactive metal and silver, a silver conductive layer formed on the adhesive layer, and a protection layer formed on the silver conductive layer and containing an oxidation-reactive metal and silver.

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Patent Abstracts of Japan, Publication No. 05-129489, May 25, 1993, 1 p.
Patent Abstracts of Japan, Publication No. 2003-036037, Feb. 7, 2003, 2. pp.
Patent Abstracts of Japan, Publication No. 2004-131747, Apr. 30, 2004, 1 p.
Patent Abstracts of Japan, Publication No. 2004-140319, May 13, 2004, 1 p.
Office Action of Mar. 13, 2009 from State Intellectual Property Office of P.R.C for App. No. 200610112109.X.

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