Thin film capacitors on gallium arsenide substrate and process f

Details Thin film capacitors on gallium arsenide substrate and process f Thin film capacitors on gallium arsenide substrate and process f

1994-03-17

1997-04-15

King, Roy V.

Coating processes

Electrical product produced

Condenser or capacitor

427 96, 427226, 4271263, B05D 512, B05D 302

Patent

active

056207395

ABSTRACT:
A silicon nitride barrier layer is deposited on a gallium arsenide substrate to prevent evaporation of the substrate in subsequent heating steps. A silicon dioxide stress reduction layer is deposited on the barrier layer. A first electrode is formed on the stress reduction layer, then a liquid precursor is spun on the first electrode, dried at about 400.degree. C., and annealed at between 600.degree. C. and 850.degree. C. to form a BST capacitor dielectric. A second electrode is deposited on the dielectric and annealed.

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