Thin film capacitor with electrodes having a perovskite structur

Details Thin film capacitor with electrodes having a perovskite structur Thin film capacitor with electrodes having a perovskite structur

1997-05-19

1999-11-16

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257295, 257310, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

059863013

ABSTRACT:
A thin film capacitor comprises a dielectric thin film having a perovskite structure sandwiched between top and bottom electrodes. At least one of the top and bottom electrodes is made of a conductive oxide material having a perovskite structure represented with a general formula of ABO.sub.3 in which A represents A-site elements composed of at least two of alkaline-earth and rare earth metals, and B represents B-site elements composed of at least one of transition metals. The capacitors involve a small leakage current, occupy a small area, and provide large capacitance. Accordingly, the capacitors realize a high integration semiconductor memory such as a DRAM of gigabit order.

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