Thin film capacitor having multi-layer dielectric film...

Details Thin film capacitor having multi-layer dielectric film... Thin film capacitor having multi-layer dielectric film...

2005-05-17

2005-05-17

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257S306000, C257S758000, C438S003000, C438S253000

Reexamination Certificate

active

06894335

ABSTRACT:
A capacitor and a method of forming the same, one embodiment of which includes depositing a multi-layer dielectric film between first and second spaced-apart electrodes. The multi-layer dielectric film includes first and second layers that have differing roughness. The layer of the dielectric film having the least amount of roughness is disposed adjacent to the first electrode. After depositing the second layer of the dielectric film adjacent to the first layer, the second layer is annealed. An exemplary embodiment of the thin film capacitor forms the dielectric material from silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5).

REFERENCES:
patent: 6226171 (2001-05-01), Beilin et al.
patent: 6617205 (2003-09-01), Kimura et al.
patent: 6730559 (2004-05-01), Agarwal et al.
patent: 20020192902 (2002-12-01), Kimura et al.
patent: 20040029338 (2004-02-01), Yamazaki et al.

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