Thin-film capacitor device and RAM device using ferroelectric fi

Details Thin-film capacitor device and RAM device using ferroelectric fi Thin-film capacitor device and RAM device using ferroelectric fi

1998-03-23

1999-03-30

Nelms, David

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, G11C 1122

Patent

active

058896961

ABSTRACT:
A semiconductor memory device is constituted by arranging a plurality of memory cells in a matrix format, each of which includes a thin-film capacitor having a ferroelectric film and a pair of electrodes facing each other via the ferroelectric film, and a transfer gate transistor connected to the thin film capacitor. A voltage corresponding to the width of a hysteresis curve obtained when the thin-film capacitor is saturated and polarized falls within the range of 5% or higher to 20% or lower of the voltage difference between the positive and negative directions in a writing operation. A remanent polarization amount obtained when the thin-film capacitor is saturated and polarized falls within the range of 5% or higher to 30% or lower of the total polarization amount obtained upon application of a voltage in the writing operation.

REFERENCES:
patent: 5666305 (1997-09-01), Mihara et al.
patent: 5796648 (1998-08-01), Kawakubo et al.
K. Torii et al., "Dielectric Properties of RF-Magnetron-Sputtered (Ba,Pb) (Zr,Ti) O.sub.3 Thin Films", Jpn. J. App; Phys. vol. 31 Part1, No. 9B, pp. 2989-2991 (1992).
H. Itoh et al., Japan Ceramics Society, 10th Electronics Materials Division Seminar (1992)--in Japanese.

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