Thin-film capacitor and method of producing same

Details Thin-film capacitor and method of producing same Thin-film capacitor and method of producing same

1999-05-25

2000-11-21

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 2976

Patent

active

061506842

ABSTRACT:
A thin-film capacitor having a perovskite-structured polycrystalline oxide thin-film as its dielectric, that exhibits an excellent insulation property is provided. This capacitor comprises a perovskite-structured, polycrystalline oxide thin-film, and top and bottom electrodes located at each side of the thin-film The perovskite-structured, polycrystalline oxide thin-film has a general formula of ABO.sub.3, where A is at least one element selected from the group consisting of bivalent metallic elements, lead, and lanthanum, and B is at least one element selected from the group consisting of quadrivalent metallic elements. A ratio of (A/B) is in a range from 1.1 to 2.0. The oxide thin-film has granular crystal grains. The perovskite-structured, polycrystalline oxide thin-film is formed by forming a perovskite-structured, amorphous oxide thin-film and by crystallizing the perovskite-structured, amorphous oxide thin-film due to heat treatment.

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Kawahara, et al., "Surface Morphologies and Electrical Properties of (Ba, Sr) TiO3 Films Prepared by Two-Step Deposition of Liquid Source Chemical Vapor Deposition", Jpn. J. Appl. Phys. vol. 34 (1995) pp. 5077-5082, Part 1, No. 9B, Sep. 1995.
Fujii, et al., "Preparation of PbTiO3 thin films by plasma-enhanced metalorganic chemical vapor deposition", Appl. Phys. Lett., vol. 65 No. 3, Jul. 18, 1994.

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