Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2004-07-29
2008-08-12
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257SE27131, C349S138000, C349S139000, C349S149000, C349S152000
Reexamination Certificate
active
07411216
ABSTRACT:
A thin film array panel is provided, which includes: a plurality of signal lines including contact parts for contact with an external device; a plurality of thin film transistors connected to the signal lines; an insulating layer formed on the signal lines and the thin film transistors; and a plurality of pixel electrodes formed on the insulating layer and connected to the thin film transistors, wherein the insulating layer includes a contact portion disposed on the contact parts of the signal lines and having a thickness smaller than other portions and the contact portion of the insulating layer includes an inclined portion having an inclination angle smaller than about 45 degrees.
REFERENCES:
patent: 6476447 (2002-11-01), Yamazaki et al.
patent: 2003/0168746 (2003-09-01), You
patent: 2006/0226554 (2006-10-01), You
Chang Jong-Woong
Ki Dong-Hyun
Kim Sung-Man
Kong Hyang-Shik
Lee Seong-Young
Cantor & Colburn LLP
Samsung Electronics Co,. Ltd.
Warren Matthew E
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