Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2008-07-01
2008-07-01
Ha, Nathan W (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
Reexamination Certificate
active
10931338
ABSTRACT:
A thin film transistor array panel is provided, which includes: a gate line; first and second data lines insulated from the gate line; a thin film transistor connected to the gate line and the first data line; a pixel electrode disposed between the first data line and the second data line, spaced apart from the first and the second data lines, and coupled to the thin film transistor; and first and second projections connected to the pixel electrode and overlapping the first and the second data lines, respectively.
REFERENCES:
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patent: 6559904 (2003-05-01), Kwak et al.
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patent: 2001/0032981 (2001-10-01), Kong et al.
patent: 2002/0047120 (2002-04-01), Inukai
patent: 2003/0094615 (2003-05-01), Yamazaki et al.
patent: 2005/0236624 (2005-10-01), Kim et al.
Kong Hyang-Shik
Park Hyeong-Jun
Park Myung-Jae
Rhee Young-Joon
Ha Nathan W
MacPherson Kwok & Chen & Heid LLP
Samsung Electronics Co,. Ltd.
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