Thin epitaxy resurf integrated circuit containing high voltage p

Details Thin epitaxy resurf integrated circuit containing high voltage p Thin epitaxy resurf integrated circuit containing high voltage p

1996-04-30

1998-12-22

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257409, 257492, H01L 2976, H01L 2994, H01L 2358

Patent

active

058523146

ABSTRACT:
N-channel LDMOS and p-channel MOS devices for high voltage integrated in a BiCMOS integrated circuit and exploiting a RESURF condition are provided with a buried region of the same type of conductivity of the epitaxial layer and a doping level intermediate between the doping level of the epitaxial layer and the doping level of a well region. The devices may be configured as source or drain followers without problems.

REFERENCES:
patent: 4300150 (1981-11-01), Colak
patent: 5043788 (1991-08-01), Omoto et al.
Thin Layer High-Voltage Devices (Resurf Devices) by J. A. Appels, et al., Philips J. Res. 35, 1-13, 1980.
IEEE Transactions of Electron Devices, vol. 38, No. 7, Jul. 1991, New York, pp. 1582-1589.
Adriaan W. Ludikhuize, "A Versatile 700-1200-V IC Process for Analog and Switching Applications.".
IEEE Transactions on Electron Devices, vol. 38, No. 8, Aug. 1991, New York, pp. 1935-1942.
Wai Tung Ng et al., "A CMOS-compatible Complementary SINFET HVIC Process," p. 1936/.

Affiliated with

Also associated with

Rating

Thin epitaxy resurf integrated circuit containing high voltage p does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin epitaxy resurf integrated circuit containing high voltage p, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin epitaxy resurf integrated circuit containing high voltage p will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2050427