Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2005-08-02
2005-08-02
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C257S347000, C438S164000
Reexamination Certificate
active
06924517
ABSTRACT:
A field effect transistor (FET), integrated circuit (IC) chip including the FETs and a method of forming the FETS. The devices have a thin channel, e.g., an ultra-thin (smaller than or equal to 10 nanometers (10 nm)) silicon on insulator (SOI) layer. Source/drain regions are located in recesses at either end of the thin channel and are substantially thicker (e.g., 30 nm) than the thin channel. Source/drain extensions and corresponding source/drain regions are self aligned to the FET gate and thin channel.
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Peter Van Zant, Microchip Fabrication, 2000, McGraw-Hill, p. 37.
Chen Huajie
Doris Bruce B.
Oldiges Philip J.
Wang Xinlin
Zhu Huilong
International Business Machines - Corporation
Lewis Monica
Peterson, Jr. Charles W.
Schurmann H. Daniel
Wilczewski Mary
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