Thin capacitive structure

Details Thin capacitive structure Thin capacitive structure

2006-08-29

2006-08-29

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S758000

Reexamination Certificate

active

07098501

ABSTRACT:
A capacitor structure in a semiconductor device is provided. The capacitor structure includes a first power rail on a topmost level of the semiconductor device, and a second power rail on the topmost level of the semiconductor device. The capacitor structure also includes a dielectric layer disposed over at least a portion of one of the first power rail and the second power rail. The capacitor structure further includes a conductive layer disposed over and between the first power rail and the second power rail where the conductive layer is in electrical contact with the power rail not having the dielectric layer, and the conductive layer is disposed over the dielectric layer.

REFERENCES:
patent: 6147857 (2000-11-01), Worley et al.
patent: 2002/0025623 (2002-02-01), Yamamichi et al.
patent: 2003/0001284 (2003-01-01), List et al.
patent: 2003/0062564 (2003-04-01), Kobayashi et al.
patent: 2004/0183209 (2004-09-01), Lin
patent: 494559 (2002-07-01), None

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