Thin buffer layers for SiGe growth on mismatched substrates

Details Thin buffer layers for SiGe growth on mismatched substrates Thin buffer layers for SiGe growth on mismatched substrates

2011-03-08

2011-03-08

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S300000, C438S312000

Reexamination Certificate

active

07902046

ABSTRACT:
Growth of SiGe on a significantly lattice mismatched substrate (e.g., Si) is provided by depositing a SiGe buffer layer at a growth temperature, then annealing the resulting structure at a temperature higher than the growth temperature. Additional buffer layers can be included following the same steps. The SiGe buffer is significantly lattice mismatched with respect to the substrate, and is preferably substantially lattice matched with a SiGe device to be grown on top of the buffer. The resulting buffer structure is relatively thin and provides low defect density, and low surface roughness. Disadvantages of thick graded buffer layers, such as high cost, high surface roughness, mechanical fragility, and CTE mismatch, are thereby avoided.

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