Thick pseudomorphic nitride epitaxial layers

Details Thick pseudomorphic nitride epitaxial layers Thick pseudomorphic nitride epitaxial layers

2010-04-21

2011-12-20

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S013000, C257S094000, C257S103000, C257SE33028, C257SE33067, C438S047000

Reexamination Certificate

active

08080833

ABSTRACT:
In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.

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