Thick oxide region in a semiconductor device

Details Thick oxide region in a semiconductor device Thick oxide region in a semiconductor device

2006-06-27

2006-06-27

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S374000, C257S510000, C257S647000

Reexamination Certificate

active

07067890

ABSTRACT:
A method of forming an oxide region in a semiconductor device includes the steps of forming a plurality of trenches in a semiconductor layer of the device, the trenches being formed in close relative proximity to one another, and oxidizing the semiconductor layer such that an insulating layer is formed on at least sidewalls and bottom walls of the trenches. The trenches are configured such that the insulating layer formed as a result of the oxidizing step substantially fills the trenches and substantially consumes the semiconductor layer between corresponding pairs of adjacent trenches. In this manner, a substantially continuous oxide region is formed throughout the plurality of trenches.

REFERENCES:
patent: 4685198 (1987-08-01), Kawakita et al.
patent: 6833583 (2004-12-01), Zandt et al.
patent: 2005/0012175 (2005-01-01), Tsuruta
patent: 2005/0179112 (2005-08-01), Belyansky et al.

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