Thick film copper metallization for microwave power transistor p

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package

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257684, 257700, 257701, 257702, 257690, 257688, 257712, H01L 2314

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active

058148809

ABSTRACT:
A heat dissipating module and package for power microwave transistors and method of making same that includes a substrate having a thick copper layer bonded to a ceramic core which is thereto subjected to high processing temperatures.

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"Film on metal leaded chip carrier", IBM TDB, vol. 31, No. 1, Jun. 1988, pp. 2-4.
Magdo, "semiconductor encapsulation", IBM TDB, vol. 20, No. 10, Mar. 1978, pp. 3903-3904.

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