Thick crystalline films on foreign substrates

Details Thick crystalline films on foreign substrates Thick crystalline films on foreign substrates

1983-05-24

1986-03-18

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617R, 156DIG111, 427 86, 427 87, C30B 108

Patent

active

045766762

ABSTRACT:
To achieve a uniform texture, large crystalline grains or, in some cases, a single crystalline orientation in a thick (>1 .mu.m) film on a foreign substrate, the film is formed so as to be thin (<1 .mu.m) in a certain section. Zone-melting recrystallization is initiated in the thin section and then extended into the thick section. The method may employ planar constriction patterns of orientation filter patterns.

REFERENCES:
patent: 4196041 (1980-04-01), Baghdadi
patent: 4323417 (1982-04-01), Lam
patent: 4383883 (1983-05-01), Mizutani
patent: 4473433 (1984-09-01), Bosch et al.
patent: 4479846 (1984-10-01), Smith et al.
J. Electrochem. Society, 12/82, pp. 21812-21818, Geis et al, v. 129, No. 12.
J. Electrochem. Society, 5/83, pp. 1178-1183, Geis et al, v. 130, No. 5.
Atwater, App. Phys. Lett. 41(8), 10/82, pp. 747, 748.

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