Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1982-08-31
1987-01-27
Edlow, Martin H.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 36, 357 46, 357 34, 307315, 307317R, 307299B, H01L 2356
Patent
active
046397558
ABSTRACT:
A thermosensitive semiconductor device has a semiconductor substrate of one conductivity type which is used as the common collector of at least two Darlington-connected transistors. The base of the first stage transistor is connected to the common collector to form a first terminal and the emitter of the final stage transistor forms a second terminal. A constant current source is connected between the first and second terminals. To reduce deviations in the temperature response, a second collector region can be used and which can extend to a depth deeper than the depth of the emitter of the final stage transistor to absorb some of the carriers injected by the emitter.
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Kamiya Masaaki
Kojima Yoshikazu
Namiki Masayuki
Tanaka Kojiro
Adams Bruce L.
Burns Robert E.
Edlow Martin H.
Kabushiki Kaisha Daini Seikosha
Lobato Emmanuel J.
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