Batteries: thermoelectric and photoelectric – Photoelectric – Cells
Patent
1999-02-19
2000-03-28
Nguyen, Nam
Batteries: thermoelectric and photoelectric
Photoelectric
Cells
136206, H01L 31058
Patent
active
060434260
ABSTRACT:
A thermophotovoltaic (TPV) energy conversion semiconductor device is provided which incorporates a heavily doped n-type region and which, as a consequence, has improved TPV conversion efficiency. The thermophotovoltaic energy conversion device includes an emitter layer having first and second opposed sides and a base layer in contact with the first side of the emitter layer. A highly doped n-type cap layer is formed on the second side of the emitter layer or, in another embodiment, a heavily doped n-type emitter layer takes the place of the cap layer.
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"Electrical and Optical Properties of Degenerately-Doped N-type In.sub.x Ga.sub.1-x As", G.W. Charache et al., Third NREL Conference on the Thermophotovoltaic Generation of Electricity, Colorado Springs, CO May 18-21, 1997.
Baldasaro Paul F.
Charache Greg W.
DePoy David M.
Caress Virginia B.
Gottlieb Paul A.
Miggins Mike
Moser William R.
Nguyen Nam
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