Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2007-06-12
2007-06-12
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S173000
Reexamination Certificate
active
11249046
ABSTRACT:
A ferromagnetic thin-film based digital memory having a substrate supporting bit structures that are electrically interconnected with information storage and retrieval circuitry and having first and second oppositely oriented relatively fixed magnetization layers and a ferromagnetic material film in which a characteristic magnetic property is substantially maintained below an associated critical temperature above which such magnetic property is not maintained. This ferromagnetic material film is separated from the first and second fixed magnetization films by corresponding layers of a nonmagnetic materials one being electrically insulative and that one remaining being electrically conductive. Each bit structure has an interconnection structure providing electrical contact thereto at a contact surface thereof substantially parallel to the intermediate layer positioned between the first contact surface and the substrate. A plurality of word line structures located across from a corresponding one of the bit structures on an opposite side. Electrical current selectively drawn through each of these bit structures and its interconnection structure can cause substantial heating of that bit structure to raise temperatures thereof while being above temperatures of at least an adjacent said bit structure because of sufficient thermal isolation.
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Kinney & Lange , P.A.
Nguyen Tan T.
NVE Corporation
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