Thermally uniform transistor

Details Thermally uniform transistor Thermally uniform transistor

1993-11-12

1998-12-15

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257287, 257280, 257579, 257583, 257563, H01L 2941, H01L 29812, H01L 2980

Patent

active

058500995

ABSTRACT:
Generally, and in one form of the invention, a method for fabricating a transistor having a plurality of active regions comprising spacing or shaping the emitters 20 and 22, or gates, in a non-uniform manner to provide a substantially constant temperature over an active region of the transistor is disclosed. An advantage of the invention is that the occurrence of a thermal runaway condition between transistor current and temperature is generally avoided.

REFERENCES:
patent: 3309585 (1967-03-01), Forrest
patent: 3704398 (1972-11-01), Fukino
patent: 4939562 (1990-07-01), Alderstein
patent: 5057882 (1991-10-01), Pritchett
Guang-bo Gao, et al., "Thermal Design Studies of High-Power Heterojunction Bipolar Transistors", IEEE Transactions on Electron Devices, 36(5), pp. 854-863, May 1989.
Guang-bo Gao, et al., "Uniform junction temperature AlGaAs/GaAs power heterojunction bipolar transistors on silicon substrates", Applied Physics Letters, 58(10), pp. 1068-1070, Mar. 11, 1991.

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