Thermally stable reference voltage generator for MRAM

Details Thermally stable reference voltage generator for MRAM Thermally stable reference voltage generator for MRAM

2005-03-29

2010-06-08

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C385S046000, C385S105000, C385S105000

Reexamination Certificate

active

07733729

ABSTRACT:
A non volatile memory device comprises memory cells such as MRAM cells, reading circuits and a reference cell for generating a reference for use by the reading circuits, and can determine if the reference is degraded by thermal instability. This can help reduce a data error rate. Detecting such degradation can prove to be more effective than trying to design in enough margins for the lifetime of the device. The reference cell can be less susceptible to degradation than other cells by using different shape of cells and different write currents. Where each reference cell is used by many memory cells, the reference cell tends to be used more often than any particular memory cell and so can be more susceptible to degradation. Another way of ensuring against longer term degradation of the reference is periodically rewriting the reference cell.

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