Thermally reprogrammable memory array and a thermally reprogramm

Details Thermally reprogrammable memory array and a thermally reprogramm Thermally reprogrammable memory array and a thermally reprogramm

1980-08-27

1983-08-02

Moffitt, James W.

Static information storage and retrieval

Systems using particular element

Resistive

365100, G11C 1121

Patent

active

043969984

ABSTRACT:
An electrically programmable memory cell comprises two terminals, a unidirectional and/or controllable semiconductor device having anode and cathode regions and a programmable resistor, said anode and cathode regions of the semiconductor device and the programmable resistor being connected in series between the terminals. The programmable resistor comprises a mixture of finely divided metallic material dispersed in a thermoplastic resin. The programmable resistor is initially substantially nonconductive (having a resistivity, for example, in excess of 1 mega ohms per cubic cm). By forcing a sufficient current through the terminals for a period of time, the resistance of the programmable resistor drops drastically to the extent that it may be considered a conductor (having a resistivity, for example, of less than 100 ohms per cubic cm). The programmable resistor may be returned to its substantially nonconductive condition by heating to a temperature above which the memory cell is normally used and below which the semiconductor device is damaged. The semiconductor device may be a transistor, for example, a field effect transistor, a diode or the like.

REFERENCES:
patent: 3719933 (1973-03-01), Wakabayashi et al.
patent: 3733690 (1973-05-01), Rizzi et al.
patent: 3744036 (1973-07-01), Frohman-Bentchkowsky
patent: 3826573 (1974-07-01), Heinzer
patent: 3938108 (1976-02-01), Salsbury
patent: 4238839 (1980-12-01), Redfern et al.
IBM Technical Disclosure Bulletin-vol. 17, No. 17, Apr. 1975, p. 3279.
Electronics-Jun. 19, 1980, p. 42, "All Polymer Part Acts as Circuit Breaker".

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