Thermally insulated phase change memory device

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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C365S148000, C365S182000

Reexamination Certificate

active

07471555

ABSTRACT:
A thermally insulated memory device includes a memory cell, the memory cell having electrodes with a via extending therebetween, a thermal insulator within the via and defining a void extending between the electrode surfaces. A memory material, such as a phase change material, is within the void and electrically couples the electrodes to create a memory material element. The thermal insulator helps to reduce the power required to operate the memory material element. An electrode may contact the outer surface of a plug to accommodate any imperfections, such as the void-type imperfections, at the plug surface. Methods for making the device and accommodating plug surface imperfections are also disclosed.

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