Thermally enhanced metal capped BGA package

Details Thermally enhanced metal capped BGA package Thermally enhanced metal capped BGA package

2005-04-19

2005-04-19

Williams, Alexander Oscar (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

C257S710000, C257S712000, C257S713000, C257S675000, C257S784000, C257S667000, C257S668000, C257S680000, C257S774000, C257S778000, C257S780000, C257S786000, C257S787000, C257S795000, C257S737000, C257S738000

Reexamination Certificate

active

06882041

ABSTRACT:
A thermally enhanced wirebond BGA package having a laminate substrate, an IC device mounted on the substrate, and a metal cap defining a cavity inside the package between the IC device and the metal cap. A substantial portion of the cavity is filled with a thermally enhanced epoxy encapsulant establishing a thermal conduction path between the IC device and the metal cap. The BGA package may be further enhanced by bonding a metal heat slug on the laminate substrate and mounting the IC device on the slug.

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