Thermally assisted multi-bit MRAM

Details Thermally assisted multi-bit MRAM Thermally assisted multi-bit MRAM

2008-09-30

2010-06-29

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S163000

Reexamination Certificate

active

07746687

ABSTRACT:
Methods of writing to a multi-bit MRAM memory unit are described. The method includes to self-detected writing to a multi-bit (i.e., multilevel) thermally assisted MRAM. The self-detected writing increases a reading margin between data state levels and decreases reading margin variability due to cell resistance variation.

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Y. Zheng et al., Magnetic Random Access Memory (MRAM), J. Nano. Sci. ← Nano Tec. 7, 177-137 (2007).
I.L. Prejbeanu et al., Thermally Assisted MRAM, J. Phys. Condens. Matter 19 (2007) 165218.
Y. Zheng et al., Multilevel Magnetic-Resistive Random Access Memory Written at Curie Point, Intermag Europe 2002, BB-02.

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