Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2011-08-23
2011-08-23
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S189160
Reexamination Certificate
active
08004883
ABSTRACT:
Methods of writing to a multi-bit MRAM memory unit are described. The method includes to self-detected writing to a multi-bit (i.e., multilevel) thermally assisted MRAM. The self-detected writing increases a reading margin between data state levels and decreases reading margin variability due to cell resistance variation.
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Dimitrov Dimitar V.
Xi Haiwen
Zheng Yuankai
Auduong Gene N.
Campbell Nelson Whipps LLC
Seagate Technology LLC
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