Thermally-assisted magnetic memory structures

Details Thermally-assisted magnetic memory structures Thermally-assisted magnetic memory structures

2005-06-28

2005-06-28

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S298000, C257S303000, C257S306000, C257S324000, C438S003000, C438S240000

Reexamination Certificate

active

06911685

ABSTRACT:
An exemplary thermally-assisted magnetic memory structure comprises a first conductor substantially surrounded by a cladding, a memory cell being thermally isolated from the first conductor by a thermally resistive region, and a second conductor electrically contacting the memory cell.

REFERENCES:
patent: 6385082 (2002-05-01), Abraham et al.
patent: 6404674 (2002-06-01), Anthony et al.
patent: 6577549 (2003-06-01), Tran et al.
patent: 6603678 (2003-08-01), Nickel et al.
patent: 6661688 (2003-12-01), Bloomquist et al.

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