Thermally assisted integrated MRAM design and process for...

Details Thermally assisted integrated MRAM design and process for... Thermally assisted integrated MRAM design and process for...

2005-11-01

2009-02-03

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07486545

ABSTRACT:
A memory element uses a conventional MTJ for reading purposes and a separate magnetic reference stack which is briefly heated while information is written into it. This information is then magnetostatically imposed on the MTJ's free layer which is located nearby. In this way the MTJ can be optimized for maximum dr/r while the reference stack can be optimized for optimum stability, since there is no half select problem. A process for manufacturing the memory element is also described.

REFERENCES:
patent: 6166948 (2000-12-01), Parkin et al.
patent: 6385082 (2002-05-01), Abraham et al.
patent: 6603678 (2003-08-01), Nickel et al.
patent: 6724674 (2004-04-01), Abraham et al.
patent: 6771534 (2004-08-01), Stipe
patent: 6819586 (2004-11-01), Anthony et al.
patent: 6819587 (2004-11-01), Sharma
patent: 6865105 (2005-03-01), Tran
patent: 6950335 (2005-09-01), Dieny et al.
patent: 6958927 (2005-10-01), Nguyen et al.
patent: 7345911 (2008-03-01), Min et al.
patent: 2004/0130936 (2004-07-01), Nguyen et al.
Co-pending U.S. Appl. No. 11/331,998, filed Jan. 13, 2006, “MRAM with Split Read-Write Cell Structures”, assigned to the same assignee.
“Thermally Assisted Switching in Exchange-Biased Storage Layer Magnetic Tunnel Junctions”, by Prejbeanu et al., IEEE Trans. on Magnetics, vol. 40, No. 4, Jul. 2004, pp. 2625-2627.

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