Thermally-activated vapor etchant for InP

Details Thermally-activated vapor etchant for InP Thermally-activated vapor etchant for InP

1985-11-18

1987-06-09

Bashore, S. Leon

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 252 791, 148DIG119, H01L 2102, C09K 1300

Patent

active

046718478

ABSTRACT:
Vapor from liquid ethylene dibromide (EDB) functions in a manner superior anhydrous HCl for in situ gas phase etching of InP substrates in Metalorganic Vapor Phased Epitaxy (MOVPE). The etch rate and surface morphology behaviors have been determined for conditions useful as a substrate cleaning step prior to growth of InP and InGaAs epilayers. The thermally activated decomposition and etching are analogous to group III-V semiconductor growth processes; the behavior in different carrier gas mixtures demonstrates dependence on gas phase reactions in the heated vapor above the substrate.

REFERENCES:
patent: 3366520 (1968-01-01), Berkenblit et al.
patent: 3522118 (1970-07-01), Taylor et al.
patent: 3855024 (1974-12-01), Lim
patent: 4349394 (1982-09-01), Wei
patent: 4397711 (1983-08-01), Donnelly et al.
patent: 4468283 (1984-08-01), Ahmed

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